KEYNOTE SPAKERS
KOFI MAKINWA
Kofi Makinwa holds degrees from Obafemi Awolowo University, Ile-Ife (B.Sc., M.Sc.), Philips International Institute, Eindhoven (M.E.E.), and Delft University of Technology, Delft (Ph.D.). From 1989 to 1999, he was a research scientist at Philips Research Laboratories, where he designed sensor systems for interactive displays, and analog front-ends for optical and magnetic recording systems. In 1999 he joined Delft University of Technology, where he is currently an Antoni van Leeuwenhoek Professor of the Faculty of Electrical Engineering, Mathematics and Computer Engineering and Head of the Microelectronics Department. His research interests include the design of mixed-signal circuits, sensor interfaces, and smart sensors. This has resulted in 17 books, 300+ technical articles and 30+ patents.
Dr. Makinwa is an IEEE fellow and a member of the Royal Netherlands Academy of Arts and Sciences. He is a co-recipient of 17 best paper awards, including two from the IEEE Journal of Solid-State Circuits (JSSC), two from the VLSI Symposium (VLSI) and five from the International Solid-State Circuits Conference (ISSCC), the top conference in the field on integrated circuit design. At the 70th anniversary of ISSCC, he was recognized as being its top contributing author. Dr. Makinwa has been a program committee member of several IEEE conferences, and has served the IEEE Solid-State Circuits Society as an Elected member of its AdCom, as a Distinguished Lecturer and as a Guest Editor of the JSSC. He has also served on the Editorial Board of the Proceedings of the IEEE, the institute’s flagship journal, and as the Analog Subcommittee Chair of ISSCC. He is currently a member of the VLSI ExCom, and is a co-organizer of the Advances in Analog Circuit Design (AACD) Workshop and the Sensor Interfaces Meeting.
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When will CMOS kill the crystal
Kofi Makinwa (TU Delft, NL)
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YOUNGCHEOL CHAE
Youngcheol Chae is currently a Professor in Electrical and Electronic Engineering at Yonsei University, Seoul, Korea.
He received his B.S., M.S., and Ph.D. degrees from Yonsei University in 2003, 2005, and 2009, respectively. During his Ph. D. studies, he advanced oversampling ADCs through innovative design techniques including inverter-based amplifiers, which have been adopted today for many low-power data converters. From 2009 to 2011, as a post-doctoral researcher at Delft University of Technology in the Netherlands, he developed high-precision sensors and interface ICs.
After joining Yonsei University in 2012, he leads a Yonsei Mixed-Signal IC group, focusing on innovative analog and mixed-signal circuits and systems for communication, sensing, and biomedical applications. This has resulted in 120+ peer-reviewed journal and conference papers and holds 50+ patents. Especially, his research team reported 20 State-of-The-Art Chips at International Solid-State Circuits Conference (ISSCC).
Dr. Chae has been serving as a TPC member of the International Solid-State Circuits Conference (ISSCC), Asian Solid-State Circuits Conference (A-SSCC), and Custom Integrated Circuits Conference (CICC). He received the ISSCC 2021 Takuo Sugano Award for Outstanding Far-East Paper, the Best Young Professor Award in Engineering from Yonsei University in 2018, the Haedong Young Engineer Award from the Institute of Electronics and Information Engineers (IEIE) Korea in 2017, the ISSCC Silkroad Award in 2017, the Outstanding Research Award of Yonsei University (2017, 2019, and 2020), and the Outstanding Teaching Awards of Yonsei University (2013, 2014). He was a guest editor of the Journal of Solid-State Circuits (JSSC) and a distinguished lecturer (DL) of IEEE Solid-State Circuits Society (SSCS).
Photon-counting SPAD X-ray sensor
​Youngcheol Chae (Yonsei University, KR)
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This talk will introduce the world's first 7.2-inch wafer-level SPAD X-ray detector for radiography and industrial applications and its prospects. The talk covers the key issues in high performance X-ray detectors and how the digital SPAD sensor properly addresses these issues. A digital SPAD pixel achieves high SNR at low dose and wide DR. This talk will describe key design technologies to reduce power consumption and achieve high throughput. The detector consists of 3296×1680 pixels with a pixel pitch of 49.5μm, corresponding to an area of ​​16.5×8.9cm2, and consumes only < 1W at 13 frames/s while achieving a DR of >110dB. Global shutter operation provides high quality images without motion artifacts. In addition, excellent radiation hardness of up to 10,000Gy is achieved.
NADINE COLLAERT
Nadine Collaert is imec fellow and director of imec’s advanced RF program. With a career spanning multiple decades, Nadine has contributed greatly to electronics research, and specifically innovated in the areas of semiconductor device design and technology. Throughout her career, she has worked on diverse projects, collaborated with various departments and groups, and made significant strides in advancing cutting-edge semiconductor technologies.
Expertise
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Advanced logic devices
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Electrical and electronics engineering
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Advanced RF
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Semiconductor device design
Career highlights
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(Co-)authored more than 400 papers published in international journals and conferences
Can GaN-on-Si Deliver the Wireless Future?
Nadine Collaert (imec, BE)
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Gallium Nitride on Silicon (GaN-on-Si) is rapidly emerging as a game-changing technology, poised to revolutionize wireless communication, particularly in the FR3 (7-20 GHz) spectrum. By combining GaN’s exceptional electron mobility and high breakdown voltage with the scalability and cost-efficiency of silicon substrates, GaN-on-Si is positioning itself as a formidable competitor to GaN-on-SiC, GaAs, and CMOS for 5G Advanced and 6G applications.
In infrastructure, GaN-on-Si is beginning to show promising performance in base stations operating at 28V and even 48V, offering high power density and efficiency while maintaining seamless compatibility with silicon manufacturing processes. For handset applications, GaN-on-Si shows immense promise, though challenges persist in achieving reliable enhancement-mode (E-mode) operation at lower voltages. Cutting-edge advancements in device architecture and material engineering are rapidly overcoming these hurdles, setting the stage for widespread adoption.
This keynote will delve into the latest breakthroughs in GaN-on-Si technology, including innovative thermal management strategies, reliability challenges and emerging solutions. It will also provide a comprehensive comparison of GaN-on-Si against competing technologies, highlighting its system-level advantages and sustainability benefits over traditional solutions. Attendees will gain valuable insights into how GaN-on-Si is enabling cost-effective, scalable, and high-performance solutions for next-generation wireless communication, while addressing the critical balance between performance, sustainability, and manufacturability in an ever-evolving RF landscape.
JOHANNA SEPULVEDA
Johanna Sepúlveda received her M.Sc. and Ph.D. degrees in Electrical Engineering – Microelectronics by the University of São Paulo, Brazil. She was a Senior Researcher in the area of security and emerging technologies at the University of South Brittany (France), INRIA (France) and at the Technical University of Munich (Germany). Currently she holds a position as the Airbus Senior Expert on Quantum-Secure Technologies and Technical Domain Manager for Quantum Technologies in all Airbus Defence and Space, being Chief Engineer of different European quantum initiatives such as the European Quantum Communication Infrastructure (EuroQCI). Also she is the vice-chair of the Strategic Advisory Board of Quantum Technologies for the European Commission and leader of the Strategic Industry Roadmap at the European Quantum Industry Consortium (QuIC). She has more than 15 years of experience in R&T and R&D in the area of security, networked systems, HPC and quantum technologies.
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Unlocking the Future: Quantum Technologies in the Era of Solid-State Electronics
Johanna Sepúlveda (Airbus Senior Expert on Quantum-Secure Technologies and Technical Domain Manager for Quantum Technologies in all Airbus Defence and Space, DE)
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Quantum technologies are rapidly transitioning from theoretical breakthroughs to practical applications that are set to transform industries. This keynote will explore how quantum technologies are driving innovations in quantum computing, secure communication, and high-precision sensing. We will discuss the integration of quantum systems with solid-state electronics, focusing on quantum processors, quantum cryptography, and sensors used in imaging, environmental monitoring, and navigation. By examining the advancements in material science, device fabrication, and system integration, this session will highlight the real-world impact of quantum technologies and their potential to reshape computing, security, and beyond.